PART |
Description |
Maker |
B82500-C-A10 B82500-C-A2 B82500-C-A8 B82500-C-A5 |
VHF chokes with ferrite core Rated voltage 250 V dc/ac Rated current 0,2 to 2 A Rated inductance 120 to 3900 mH
|
EPCOS AG
|
BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
951CXP825K-SF-F |
AC Rated, Round Axial Leaded, UL 810 Fail Safe, Rated 10,000 AFCLMax.
|
Cornell Dubilier Electr...
|
B82134 B82111-E B82114 B82114-R-A1 B82114-R-A4 B82 |
VHF chokes for power line applications Rated voltage 500 V dc/ac Rated current max. 1 A
|
EPCOS AG EPCOS[EPCOS]
|
IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system 10 AMPERE COMPLEMENTARY Darlington Complementary Silicon Power Transistors
|
Motorola Inc ON Semiconductor Motorola, Inc
|
2N6052 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 12 AMPERE COMPLEMENTARY
|
ON Semiconductor
|
Q67040-S4005-A2 BUZ110S |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
B82498-B3569-M B82498-B3279-M B82498-B3689-K |
Size 0805 (EIA) and/or 2012 (IEC) Rated inductance 2,7 to 4700 nH Rated current 90 to 1000 mA 尺寸0805(EIA)和/012年(IEC)的额定电感2,7700 nH的额定电0一○○○毫
|
EPCOS AG
|
MJF6668 ON2050 MJF6388 MJF6688 |
Complementary power darlington From old datasheet system COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor] Motorola, Inc MOTOROLA INC
|
MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|